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| NTE36 (NPN) & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICEO IEBO hFE1 hFE2 Gain Bandwidth Product Output Capacitance NTE36 NTE37 Base-Emitter Voltage Collector-Emitter Saturation Voltage NTE36 NTE37 fT Cob Test Conditions VCB = 80V, IE = 0 VBE = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A VCE = 5V, IC = 1A VCB = 10V, f = 1MHz - - VBE VCE(sat) VCE = 5V, IC = 1A IC = 5A, IB = 500mA - - 0.6 1.1 2.5 - - 210 300 - - - 1.5 V V Min - - 60 20 - Typ - - - - 15 Max 0.1 0.1 200 - - MHz pF Unit mA mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol Test Conditions Min 160 140 140 6 - - - - ton - - 6.88 1.61 - - Typ - - - - 0.26 0.25 0.68 0.53 Max - - - - - - s - - s Unit V V V V s V(BR)CBO IC = 5mA, IE = 0 V(BR)CEO IC = 5mA, RBE = IC = 50mA, RBE = Emitter-Base Breakdown Voltage Turn-On Time NTE36 NTE37 Fall Time NTE36 NTE37 Storage Time NTE36 NTE37 V(BR)EBO IE = 5mA, IC = 0 ton 10IB1 = -10IB2 = IC = 1A, PW = 20s tf Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. .190 (4.82) .615 (15.62) .670 (17.0) Max .197 (5.0) .787 (20.0) OR (Note) .591 (15.02) .126 (3.22) Dia .217 (5.5) .866 (22.0) B .130 (3.3) Dia C E .590 (15.0) .177 (4.5) .787 (20.0) .747 (19.0) Min B C E .215 (5.47) .215 (5.47) .025 (0.65) NOTE: Either case style may be shipped depending on stock. |
Price & Availability of NTE37
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